? 2010 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 100 v v dgr t j = 25 c to 150 c, r gs = 1m 100 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 178 a i dm t c = 25 c, pulse width limited by t jm 500 a i a t c = 25 c 100 a e as t c = 25 c 5 j p d t c = 25 c 830 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, rms t = 1 minute 2500 v~ i isol 1ma t = 1 second 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 30 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 100 v v gs(th) v ds = v gs , i d = 3ma 2.0 4.5 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 10 a t j = 125 c 250 a r ds(on) v gs = 10v, i d = 100a, note 1 11 m linear l2 tm power mosfet w/ extended fbsoa n-channel enhancement mode guaranteed fbsoa avalanche rated IXTN200N10L2 v dss = 100v i d25 = 178a r ds(on) 11m ds100238(2/10) features ? minibloc with aluminium nitride isolation ? designed for linear operation ? international standard package guaranteed fbsoa at 75c ? avalanche rated ? molding epoxy meets ul94 v-0 flammability classification advantages ? easy to mount ? space savings ? high power density applications ? programmable loads ? current regulators ? dc-dc converters ? battery chargers ? dc choppers ? temperature and lighting controls either source terminal s can be used as the source terminal or the kelvin source (gate return) terminal. minibloc, sot-227 e153432 g d s s g = gate d = drain s = source advance technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXTN200N10L2 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. sot-227b (ixtn) outline (m4 screws (4x) supplied) advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 55 73 90 s c iss 23 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 3200 pf c rss 610 pf t d(on) 40 ns t r 225 ns t d(off) 127 ns t f 27 ns q g(on) 540 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 100a 115 nc q gd 226 nc r thjc 0.15 c/w r thcs 0.05 c/w safe-operating-area specification symbol test conditions characteristic values min. typ. max. soa v ds = 100v, i d = 5a, t c = 75 c , tp = 5s 500 w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 200 a i sm repetitive, pulse width limited by t jm 800 a v sd i f = 100a, v gs = 0v, note 1 1.4 v t rr 245 ns i rm 24.4 a q rm 3.0 c resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 100a r g = 1 (external) i f = 100a, -di/dt = 100a/ s v r = 50v, v gs = 0v
? 2010 ixys corporation, all rights reserved IXTN200N10L2 fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 180 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v ds - volts i d - amperes v gs = 20v 14v 12v 10v 7 v 8 v 6 v 4 v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 0 2 4 6 8 1012141618 v ds - volts i d - amperes v gs = 20v 6 v 8 v 7 v 12 v 10 v fig. 3. output characteristics @ t j = 125oc 0 20 40 60 80 100 120 140 160 180 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v ds - volts i d - amperes v gs = 20v 14v 12v 10v 4 v 6v 8v fig. 4. r ds(on) normalized to i d = 100a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50-25 0 255075100125150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 200a i d = 100a fig. 5. r ds(on) normalized to i d = 100a value vs. drain current 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 40 80 120 160 200 240 280 320 i d - amperes r ds(on) - normalized v gs = 10v 20v - - - - t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 20 40 60 80 100 120 140 160 180 200 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTN200N10L2 fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 200 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 160 180 200 220 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 40 80 120 160 200 240 280 320 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 100 200 300 400 500 600 700 800 q g - nanocoulombs v gs - volts v ds = 50v i d = 100a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2010 ixys corporation, all rights reserved IXTN200N10L2 ixys ref: t_200n10l2(9r)1-26-10 fig. 14. forward-bias safe operating area @ t c = 75oc 1 10 100 1,000 1 10 100 v ds - volts i d - amperes t j = 150oc t c = 75oc single pulse 25s 1ms 100s r ds(on) limit 100ms 10ms dc fig. 13. forward-bias safe operating area @ t c = 25oc 1 10 100 1,000 1 10 100 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc 100ms
mouser electronics authorized distributor click to view pricing, inventory, delivery & lifecycle information: ixys: ? IXTN200N10L2
|
